© Semiconductor Components Industries, LLC, 2001

October, 2001 – Rev. 0

1

Publication Order Number:

MPS2907A/D

MPS2907A

Preferred Device

General Purpose

Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

–60

Vdc

Collector–Base Voltage

VCBO

–60

Vdc

Emitter–Base Voltage

VEBO

–5.0

Vdc

Collector Current – Continuous

IC

–600

mAdc

Total Device Dissipation

@ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation

@ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–55 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction to Ambient

R

θJA

200

°C/W

Thermal Resistance,

Junction to Case

R

θJC

83.3

°C/W

Device

Package

Shipping

ORDERING INFORMATION

http://onsemi.com

TO–92

CASE 29

STYLES 1, 14

3

2

1

Preferred devices are recommended choices for future use

and best overall value.

MPS2907A

TO–92

5000 Units/Box

COLLECTOR

3

2

BASE

1

EMITTER

MPS2907ARLRA

TO–92

2000/Tape & Reel

MPS2907ARLRE

TO–92

2000/Ammo Pack

MPS2907ARLRM

TO–92

2000/Ammo Pack

MPS2907ARLRP

TO–92

2000/Ammo Pack

STYLE 1

Y

= Year

WW

= Work Week

MARKING DIAGRAMS

MPS2

907A

YWW