MPS2907A datasheet(3/8 Pages) ONSEMI

Part #	MPS2907A

Description	General Purpose Transistors(PNP Silicon)

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MPS2907A

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3

0

-16 V

200 ns

50

1.0 k

200

-30 V

TO OSCILLOSCOPE

RISE TIME ≤ 5.0 ns

+15 V -6.0 V

1.0 k

37

50

1N916

1.0 k

200 ns

-30 V

TO OSCILLOSCOPE

RISE TIME ≤ 5.0 ns

INPUT

Zo = 50 Ω

PRF = 150 PPS

RISE TIME ≤ 2.0 ns

P.W. < 200 ns

INPUT

Zo = 50 Ω

PRF = 150 PPS

RISE TIME ≤ 2.0 ns

P.W. < 200 ns

Figure 1. Delay and Rise Time Test Circuit

Figure 2. Storage and Fall Time Test Circuit

TYPICAL CHARACTERISTICS

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

3.0

0.2

-0.1

TJ = 125°C

25°C

-55°C

VCE = -1.0 V

VCE = -10 V

2.0

-0.2 -0.3

-0.5 -0.7 -1.0

-2.0 -3.0

-5.0 -7.0 -10

-20 -30

-50 -70 -100

-200 -300 -500

Figure 4. Collector Saturation Region

IB, BASE CURRENT (mA)

-0.4

-0.6

-0.8

-1.0

-0.2

0

IC = -1.0 mA

-0.005

-10 mA

-0.01

-100 mA

-500 mA

-0.02 -0.03 -0.05 -0.07 -0.1

-0.2 -0.3

-0.5 -0.7 -1.0

-2.0 -3.0

-5.0 -7.0 -10

-20 -30

-50

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