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MMDF3N03HDR2 Datasheet(PDF) 6 Page - ON Semiconductor |
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MMDF3N03HDR2 Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 12 page MMDF3N03HD http://onsemi.com 6 RG, GATE RESISTANCE (OHMS) 1000 1 100 10 1 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.0 1.5 2.0 3.0 2.5 0.5 0.55 0 VDD = 15 V ID = 3 A VGS = 10 V TJ = 25°C td(on) tr Figure 10. Resistive Switching Time Variation versus Gate Resistance Figure 11. Diode Forward Voltage versus Current 0.5 TJ = 25°C VGS = 0 V 0.6 0.65 0.7 0.75 0.8 0.85 100 10 td(off) tf Figure 12. Maximum Rated Forward Biased Safe Operating Area 0.1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 10 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 VGS = 20 V SINGLE PULSE TC = 25°C 10 0.1 dc 10 ms 1 100 100 Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating, 10s max. 1 ms 100 µs 10 µs TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature 0 25 50 75 100 125 150 ID = 9 A 250 150 350 100 50 200 300 |
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