PRELIMINARY

Revision 3.0

- 3 -

September 2001

PRELIMINARY

K6R1004C1C-C/C-L, K6R1004C1C-I/C-P

CMOS SRAM

°C)

≤ 8ns) for I ≤ 20mA.

≤ 8ns) for I ≤ 20mA.

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

4.5

5.0

5.5

V

Ground

0

0

0

V

Input High Voltage

2.2

-

V

Input Low Voltage

-0.5*

-

0.8

V

°C, f=1.0MHz)

* Capacitance is sampled and not 100% tested.

Item

Symbol

Test Conditions

MIN

Max

Unit

Input/Output Capacitance

-

8

pF

Input Capacitance

-

6

pF

°C, Vcc=5.0V±10%, unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Max

Unit

Input Leakage Current

-2

2

µA

Output Leakage Current

-2

2

µA

Operating Current

Min. Cycle, 100% Duty

10ns

-

75

mA

12ns

-

70

15ns

-

68

Standby Current

-

30

mA

f=0MHz, CS

Normal

-

5

L-Ver.

-

0.5

Output Low Voltage Level

-

0.4

V

Output High Voltage Level

2.4

-

V

-

3.95

V

ABSOLUTE MAXIMUM RATINGS*

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Symbol

Rating

Unit

-0.5 to Vcc+0.5V

V

-0.5 to 7.0

V

Power Dissipation

1

W

Storage Temperature

-65 to 150

°C

Operating Temperature

Commercial

0 to 70

°C

Industrial

-40 to 85

°C