MMBT3904LT1 datasheet(5/6 Pages) ONSEMI

Part #	MMBT3904LT1

Description	General Purpose Transistor(NPN Silicon)

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MMBT3904LT1

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5

TYPICAL STATIC CHARACTERISTICS

Figure 15. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

2.0

0.2

0.1

0.5

2.0

3.0

10

50

70

0.2

0.3

0.1

100

1.0

0.7

200

30

20

5.0

7.0

VCE = 1.0 V

TJ = +125°C

+25°C

−55 °C

Figure 16. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

0.5

2.0

3.0

10

0.2

0.3

0

1.0

0.7

5.0

7.0

IC = 1.0 mA

TJ = 25°C

0.07

0.05

0.03

0.02

0.01

10 mA

30 mA

100 mA

Figure 17. “ON” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

1.2

0.2

Figure 18. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

1.0

2.0

5.0

10

20

50

0

100

−0.5

0

0.5

1.0

0

60

80

120

140

160

180

20

40

100

200

−1.0

−1.5

−2.0

200

TJ = 25°C

VBE(sat) @ IC/IB =10

VCE(sat) @ IC/IB =10

VBE @ VCE =1.0 V

+25°C TO +125°C

−55 °C TO +25°C

+25°C TO +125°C

−55 °C TO +25°C

qVC FOR VCE(sat)

qVB FOR VBE(sat)

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