MMBT2222LT3 datasheet(3/8 Pages) ONSEMI

Part #	MMBT2222LT3

Description	General Purpose Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT2222LT1, MMBT2222ALT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Unit

Max

Min

Symbol

SMALL−SIGNAL CHARACTERISTICS

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

hoe

5.0

25

35

200

mmhos

Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)

MMBT2222A

rb, Cc

−

150

ps

Noise Figure

(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz) MMBT2222A

NF

−

4.0

dB

SWITCHING CHARACTERISTICS (MMBT2222A only)

Delay Time

(VCC = 30 Vdc, VBE(off) = − 0.5 Vdc,

td

−

10

ns

Rise Time

(VCC = 30 Vdc, VBE(off) = −0.5 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

tr

−

25

ns

Storage Time

(VCC = 30 Vdc, IC = 150 mAdc,

ts

−

225

ns

Fall Time

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

tf

−

60

ns

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

Figure 1. Turn−On Time

Figure 2. Turn−Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4 ns

*Total shunt capacitance of test jig, connectors, and oscilloscope.

+16 V

−2 V

< 2 ns

0

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1 kW

+30 V

200

CS* < 10 pF

+16 V

−14 V

0

< 20 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1 k

+30 V

200

CS* < 10 pF

−4 V

1N914

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