Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

AS29F200B-120TI Datasheet(PDF) 7 Page - Alliance Semiconductor Corporation

Part # AS29F200B-120TI
Description  5V 256K x 8/128K x 8 CMOS FLASH EEPROM
Download  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS29F200B-120TI Datasheet(HTML) 7 Page - Alliance Semiconductor Corporation

Back Button AS29F200B-120TI Datasheet HTML 3Page - Alliance Semiconductor Corporation AS29F200B-120TI Datasheet HTML 4Page - Alliance Semiconductor Corporation AS29F200B-120TI Datasheet HTML 5Page - Alliance Semiconductor Corporation AS29F200B-120TI Datasheet HTML 6Page - Alliance Semiconductor Corporation AS29F200B-120TI Datasheet HTML 7Page - Alliance Semiconductor Corporation AS29F200B-120TI Datasheet HTML 8Page - Alliance Semiconductor Corporation AS29F200B-120TI Datasheet HTML 9Page - Alliance Semiconductor Corporation AS29F200B-120TI Datasheet HTML 10Page - Alliance Semiconductor Corporation AS29F200B-120TI Datasheet HTML 11Page - Alliance Semiconductor Corporation Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 20 page
background image
®
$65<)533
$65<)533
$65<)533
$65<)533
3UHOLPLQDU\#LQIRUPDWLRQ
3UHOLPLQDU\#LQIRUPDWLRQ
3UHOLPLQDU\#LQIRUPDWLRQ
3UHOLPLQDU\#LQIRUPDWLRQ
','#4407333<0$1#72:233
','#4407333<0$1#72:233
','#4407333<0$1#72:233
','#4407333<0$1#72:233
$//,$1&(#6(0,&21'8&725
$//,$1&(#6(0,&21'8&725
$//,$1&(#6(0,&21'8&725
$//,$1&(#6(0,&21'8&725
::::
6WDWXV#RSHUDWLRQV
Erase Suspend
Erase suspend allows interruption of sector erase operations to perform data reads from a sector not
being erased. Erase suspend applies only during sector erase operations, including the time-out
period. Writing an Erase Suspend command during sector erase time-out results in immediate
termination of time-out period and suspension of erase operation.
AS29F200 ignores any commands during erase suspend other than the Reset or Erase Resume
commands. Writing erase resume continues erase operations. Addresses are DON’T CARE when
writing Erase Suspend or Erase Resume commands.
AS29F200 takes 0.2–15 µs to suspend erase operations after receiving Erase Suspend command.
Check completion of erase suspend by polling RY/BY. Check DQ2 in conjunction with DQ6 to
determine if a sector is being erased. AS29F200 ignores redundant writes of erase suspend.
AS29F200 defaults to erase-suspend-read mode while an erase operation has been suspended.
While in erase-suspend-read mode AS29F200 allows reading data from or programming data to
any sector not undergoing sector erase.
Write the Resume command 30h to continue operation of sector erase. AS29F200 ignores
redundant writes of the Resume command. AS29F200 permits multiple suspend/resume
operations during sector erase.
Sector Protect
When attempting to write to a protected sector, DATA polling andToggle Bit 1 (DQ6) are activated
for about <1 µs. When attempting to erase a protected sector, DATA polling and
Toggle Bit 1 (DQ6) are activated for about <5 µs. In both cases, the device returns to read mode
without altering the specified sectors.
Ready/Busy
RY/BY indicates whether an automated on-chip algorithm is in progress (RY/BY = low) or
completed (RY/BY = high). The device does not accept program/erase commands when
RY/BY = low. RY/BY= high when device is in erase suspend mode. RY/BY is an open drain output,
enabling multiple RY/BY pins to be tied in parallel with a pull up resistor to VCC.
DATA polling (DQ7)
Only active during automated on-chip algorithms or sector erase time outs. DQ7 reflects
complement of data last written when read during the automated on-chip algorithm (0 during
erase algorithm); reflects true data when read after completion of an automated on-chip algorithm
(1 after completion of erase agorithm).
Toggle bit (DQ6)
Active during automated on-chip algorithms or sector erase time outs. DQ6 toggles when CE or OE
toggles, or an Erase Resume command is invoked. DQ6 is valid after the rising edge of the fourth
pulse of WE during programming; after the rising edge of the sixth WE pulse during chip erase;
after the last rising edge of the sector erase WE pulse for sector erase. For protected sectors, DQ6
toggles for only <1 µs during writes, and <5 µs during erase (if all selected sectors are protected).
Exceeding time limit
(DQ5)
Indicates unsuccessful completion of program/erase operation (DQ5 = 1). DATA polling remains
active; CE powers the device down to 2 mA. If DQ5 = 1 during chip erase, all or some sectors are
defective; during byte programming, the entire sector is defective; during sector erase, the sector is
defective (in this case, reset the device and execute a program or erase command sequence to
continue working with functional sectors). Attempting to program 0 to 1 will set DQ5 = 1.
Item
Description


Similar Part No. - AS29F200B-120TI

ManufacturerPart #DatasheetDescription
logo
Alliance Semiconductor ...
AS29F010 ALSC-AS29F010 Datasheet
175Kb / 10P
   5V 128K x 8 CMOS FLASH EEPROM
logo
Austin Semiconductor
AS29F010 AUSTIN-AS29F010 Datasheet
530Kb / 26P
   128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY
logo
Micross Components
AS29F010 MICROSS-AS29F010 Datasheet
871Kb / 26P
   Flexible sector architecture
logo
Alliance Semiconductor ...
AS29F010-120LC ALSC-AS29F010-120LC Datasheet
175Kb / 10P
   5V 128K x 8 CMOS FLASH EEPROM
AS29F010-120PC ALSC-AS29F010-120PC Datasheet
175Kb / 10P
   5V 128K x 8 CMOS FLASH EEPROM
More results

Similar Description - AS29F200B-120TI

ManufacturerPart #DatasheetDescription
logo
Alliance Semiconductor ...
AS29F010 ALSC-AS29F010 Datasheet
175Kb / 10P
   5V 128K x 8 CMOS FLASH EEPROM
AS29F040 ALSC-AS29F040 Datasheet
341Kb / 18P
   5V 512K x 8 CMOS FLASH EEPROM
logo
Force Technologies Ltd
FT28C010-XXXXX-X FORCE-FT28C010-XXXXX-X Datasheet
2Mb / 30P
   128K x 8 Bit 5V EEPROM
logo
Macronix International
MX28F2100B MCNIX-MX28F2100B Datasheet
283Kb / 45P
   2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
logo
Alliance Semiconductor ...
AS7C1024C ALSC-AS7C1024C Datasheet
113Kb / 9P
   5V 128K X 8 CMOS SRAM
AS7C1024B ALSC-AS7C1024B Datasheet
111Kb / 9P
   5V 128K X 8 CMOS SRAM
logo
Winbond
W29EE012 WINBOND-W29EE012 Datasheet
242Kb / 19P
   128K X 8 CMOS FLASH MEMORY
W29EE011 WINBOND-W29EE011 Datasheet
183Kb / 20P
   128K X 8 CMOS FLASH MEMORY
W29C011A WINBOND-W29C011A Datasheet
153Kb / 19P
   128K X 8 CMOS FLASH MEMORY
W49F020 WINBOND-W49F020 Datasheet
190Kb / 21P
   256K X 8 CMOS FLASH MEMORY
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com