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AS29F200B-120TI Datasheet(PDF) 7 Page - Alliance Semiconductor Corporation |
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AS29F200B-120TI Datasheet(HTML) 7 Page - Alliance Semiconductor Corporation |
7 / 20 page ® $65<)533 $65<)533 $65<)533 $65<)533 3UHOLPLQDU\#LQIRUPDWLRQ 3UHOLPLQDU\#LQIRUPDWLRQ 3UHOLPLQDU\#LQIRUPDWLRQ 3UHOLPLQDU\#LQIRUPDWLRQ ','#4407333<0$1#72:233 ','#4407333<0$1#72:233 ','#4407333<0$1#72:233 ','#4407333<0$1#72:233 $//,$1&(#6(0,&21'8&725 $//,$1&(#6(0,&21'8&725 $//,$1&(#6(0,&21'8&725 $//,$1&(#6(0,&21'8&725 :::: 6WDWXV#RSHUDWLRQV Erase Suspend Erase suspend allows interruption of sector erase operations to perform data reads from a sector not being erased. Erase suspend applies only during sector erase operations, including the time-out period. Writing an Erase Suspend command during sector erase time-out results in immediate termination of time-out period and suspension of erase operation. AS29F200 ignores any commands during erase suspend other than the Reset or Erase Resume commands. Writing erase resume continues erase operations. Addresses are DON’T CARE when writing Erase Suspend or Erase Resume commands. AS29F200 takes 0.2–15 µs to suspend erase operations after receiving Erase Suspend command. Check completion of erase suspend by polling RY/BY. Check DQ2 in conjunction with DQ6 to determine if a sector is being erased. AS29F200 ignores redundant writes of erase suspend. AS29F200 defaults to erase-suspend-read mode while an erase operation has been suspended. While in erase-suspend-read mode AS29F200 allows reading data from or programming data to any sector not undergoing sector erase. Write the Resume command 30h to continue operation of sector erase. AS29F200 ignores redundant writes of the Resume command. AS29F200 permits multiple suspend/resume operations during sector erase. Sector Protect When attempting to write to a protected sector, DATA polling andToggle Bit 1 (DQ6) are activated for about <1 µs. When attempting to erase a protected sector, DATA polling and Toggle Bit 1 (DQ6) are activated for about <5 µs. In both cases, the device returns to read mode without altering the specified sectors. Ready/Busy RY/BY indicates whether an automated on-chip algorithm is in progress (RY/BY = low) or completed (RY/BY = high). The device does not accept program/erase commands when RY/BY = low. RY/BY= high when device is in erase suspend mode. RY/BY is an open drain output, enabling multiple RY/BY pins to be tied in parallel with a pull up resistor to VCC. DATA polling (DQ7) Only active during automated on-chip algorithms or sector erase time outs. DQ7 reflects complement of data last written when read during the automated on-chip algorithm (0 during erase algorithm); reflects true data when read after completion of an automated on-chip algorithm (1 after completion of erase agorithm). Toggle bit (DQ6) Active during automated on-chip algorithms or sector erase time outs. DQ6 toggles when CE or OE toggles, or an Erase Resume command is invoked. DQ6 is valid after the rising edge of the fourth pulse of WE during programming; after the rising edge of the sixth WE pulse during chip erase; after the last rising edge of the sector erase WE pulse for sector erase. For protected sectors, DQ6 toggles for only <1 µs during writes, and <5 µs during erase (if all selected sectors are protected). Exceeding time limit (DQ5) Indicates unsuccessful completion of program/erase operation (DQ5 = 1). DATA polling remains active; CE powers the device down to 2 mA. If DQ5 = 1 during chip erase, all or some sectors are defective; during byte programming, the entire sector is defective; during sector erase, the sector is defective (in this case, reset the device and execute a program or erase command sequence to continue working with functional sectors). Attempting to program 0 to 1 will set DQ5 = 1. Item Description |
Similar Part No. - AS29F200B-120TI |
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Similar Description - AS29F200B-120TI |
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