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AS7C33512FT18A-75TQI Datasheet(PDF) 8 Page - Alliance Semiconductor Corporation

Part # AS7C33512FT18A-75TQI
Description  3.3V 512K x 18 Flow-through synchronous SRAM
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C33512FT18A-75TQI Datasheet(HTML) 8 Page - Alliance Semiconductor Corporation

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AS7C33512FT18A
11/30/04, v 1.1
Alliance Semiconductor
8 of 19
Absolute maximum ratings
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to abso-
lute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Recommended operating conditions at 2.5V I/O
Parameter
Symbol
Min
Max
Unit
Power supply voltage relative to GND
VDD, VDDQ
–0.5
+4.6
V
Input voltage relative to GND (input pins)
VIN
–0.5
VDD + 0.5
V
Input voltage relative to GND (I/O pins)
VIN
–0.5
VDDQ + 0.5
V
Power dissipation
Pd
–1.8
W
Short circuit output current
IOUT
20
mA
Storage temperature
Tstg
–65
+150
oC
Temperature under bias
Tbias
–65
+135
oC
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ
3.135
3.3
3.465
V
Ground supply
Vss
0
0
0
V
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ
2.375
2.5
2.625
V
Ground supply
Vss
0
0
0
V


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