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MJW16212 Datasheet(PDF) 6 Page - ON Semiconductor

Part # MJW16212
Description  POWER TRANSISTOR
Download  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJW16212 Datasheet(HTML) 6 Page - ON Semiconductor

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MJW16212
3–6
Motorola Bipolar Power Transistor Device Data
IC, COLLECTOR CURRENT (A)
Figure 11. Typical Resistive Storage Time
15
5
2
3
7
12
7
5
3
IC, COLLECTOR CURRENT (A)
Figure 12. Typical Resistive Fall Time
700
100
300
1500
23
5
7
110
200
500
βf = 5
TJ = 25°C
IB2 = IB1
IB2 = 2 (IB1)
βf = 5
TJ = 25°C
IB2 = IB1
IB2 = 2 (IB1)
10
1000
1
10
15
15
ts and tf
+15
150
Ω 100 Ω
100
µF
MTP8P10
MPF930
MPF930
MUR105
MJE210
150
Ω
500
µF
Voff
50
Ω
+10 V
MTP12N10
MTP8P10
RB1
RB2
A
1
µF
1
µF
T.U.T.
*IC
*IB
A
RL
VCC
V(off) adjusted
to give specified
off drive
VCC
250 V
RL
28
Ω
IC
5.5 A
IB1
1.1 A
IB2
Per Spec
RB1
3.3
Ω
RB2
Per Spec
Table 3. Resistive Load Switching
t, TIME (ms)
0.01
110
0.1
1
0.2
0.1
0.05
R
θJC(t) = r(t) RθJC
R
θJC = 0.7°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
Figure 13. Thermal Response
0.5
D = 0.5
100
1000
10000
0.2
0.1


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