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AS7C33128NTF36B-10TQC Datasheet(PDF) 6 Page - Alliance Semiconductor Corporation

Part # AS7C33128NTF36B-10TQC
Description  3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C33128NTF36B-10TQC Datasheet(HTML) 6 Page - Alliance Semiconductor Corporation

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AS7C33128NTF32B/36B
4/13/05, v 1.3
Alliance Semiconductor
P. 6 of 18
Synchronous truth table[5,6,7,8,9,11]
Key: X = Don’t Care, H = HIGH, L = LOW. BWn = H means all byte write signals (BWa, BWb, BWc, and BWd) are HIGH. BWn = L means one or more byte write signals are
LOW.
Notes:
1 CONTINUE BURST cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ or WRITE) is chosen in the initial BEGIN BURST
cycle. A CONINUE DESELECT cycle can only be entered if a DESELECT CYCLE is executed first.
2 DUMMY READ and WRITE ABORT cycles can be considered NOPs because the device performs no external operation. A WRITE ABORT means a WRITE command is given,
but no operation is performed.
3 OE may be wired LOW to minimize the number of control signal to the SRAM. The device will automatically turn off the output drivers during a WRITE cycle. OE may be used
when the bus turn-on and turn-off times do not meet an application’s requirements.
4 If an INHIBIT CLOCK command occurs during a READ operation, the DQ bus will remain active (Low-Z). If it occurs during a WRITE cycle, the bus will remain in High-Z. No
WRITE operations will be performed during the INHIBIT CLOCK cycle.
5 BWa enables WRITEs to byte “a” (DQa pins); BWb enables WRITEs to byte “b” (DQb pins); BWc enables WRITEs to byte “c” (DQc pins); BWd enables WRITEs to byte “d”
(DQd pins).
6 All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
7 Wait states are inserted by setting CEN HIGH.
8 This device contains circuitry that will ensure that the outputs will be in High-Z during power-up.
9 The device incorporates a 2-bit burst counter. Address wraps to the initial address every fourth BURST CYCLE.
10 The address counter is incremented for all CONTINUE BURST cycles.
11 ZZ pin is always Low.
CE0 CE1 CE2 ADV/LD R/W
BWn
OE CEN
Address
source
CLK
Operation
DQ
Notes
H
X
X
L
X
X
X
L
NA
L to H
DESELECT Cycle
High-Z
X
X
H
L
X
X
X
L
NA
L to H
DESELECT Cycle
High-Z
X
L
X
L
X
X
X
L
NA
L to H
DESELECT Cycle
High-Z
X
X
X
H
X
X
X
L
NA
L to H
CONTINUE DESELECT Cycle
High-Z
1
L
H
L
L
H
X
L
L
External L to H
READ Cycle (Begin Burst)
Q
X
X
X
H
X
X
L
L
Next
L to H
READ Cycle (Continue Burst)
Q
1,10
L
H
L
L
H
X
H
L
External L to H NOP/DUMMY READ (Begin Burst) High-Z
2
X
X
X
H
X
X
H
L
Next
L to H
DUMMY READ (Continue Burst)
High-Z 1,2,10
L
H
L
L
L
L
X
L
External L to H
WRITE CYCLE (Begin Burst)
D
3
X
X
X
H
X
L
X
L
Next
L to H
WRITE CYCLE (Continue Burst)
D
1,3,10
L
H
L
L
L
H
X
L
External L to H NOP/WRITE ABORT (Begin Burst) High-Z
2,3
X
X
X
H
X
H
X
L
Next
L to H
WRITE ABORT (Continue Burst)
High-Z
1,2,3,
10
X
X
X
X
X
X
X
H
Current L to H
INHIBIT CLOCK
-
4


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