®

AS7C33128NTD32B

AS7C33128NTD36B

2/8/05; v.1.5

Alliance Semiconductor

P. 7 of 18

State Diagram for NTD SRAM

Absolute maximum ratings

Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional

operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to

absolute maximum rating conditions may affect reliability.

Recommended operating conditions at 3.3V I/O

Recommended operating conditions at 2.5V I/O

Parameter

Symbol

Min

Max

Unit

Power supply voltage relative to GND

–0.5

+4.6

V

Input voltage relative to GND (input pins)

–0.5

V

Input voltage relative to GND (I/O pins)

–0.5

V

Power dissipation

–1.8

W

Short circuit output current

–

20

mA

Storage temperature

–65

+150

Temperature under bias

–65

+135

Parameter

Symbol

Min

Nominal

Max

Unit

Supply voltage for inputs

3.135

3.3

3.465

V

Supply voltage for I/O

3.135

3.3

3.465

V

Ground supply

Vss

0

0

0

V

Parameter

Symbol

Min

Nominal

Max

Unit

Supply voltage for inputs

3.135

3.3

3.465

V

Supply voltage for I/O

2.375

2.5

2.625

V

Ground supply

Vss

0

0

0

V

Dsel

Read

Burst

Burst

Write

Read

Write

Burst

Read

Dsel

Read

Burst

Write

Dse

l

Wri

te

Burst

Dsel

Burst

Burst

Write

Read