IS62C1024-70TI datasheet(4/8 Pages) ISSI

Part #	IS62C1024-70TI

Description	128K x 8 HIGH-SPEED CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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IS62C1024

ISSI®

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

01/14/00

AC TEST CONDITIONS

Parameter

Unit

Input Pulse Level

0V to 3.0V

Input Rise and Fall Times

5 ns

Input and Output Timing

1.5V

and Reference Level

Output Load

See Figures 1a and 1b

AC TEST LOADS

Figure 1a.

Figure 1b.

480

Ω

5 pF

Including

jig and

scope

255

Ω

OUTPUT

5V

480

Ω

100 pF

Including

jig and

scope

255

Ω

OUTPUT

5V

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-35

-45

-55

-70

Symbol Parameter

Test Conditions

Min. Max.

Unit

ICC

Vcc Dynamic Operating

VCC = Max.,

CE = VIL

Com.

—

150

—

135

—

120

—

90

mA

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

—

160

—

145

—

130

—

100

ISB1

TTL Standby Current

VCC = Max.,

Com.

—

40

—

40

—

40

—

40

mA

(TTL Inputs)

VIN = VIH or VIL,

CE1

≥ VIH, Ind.

—

60

—

60

—

60

—

60

or CE2

≤ VIL, f = 0

ISB2

CMOS Standby

VCC = Max.,

Com.

—

30

—

30

—

30

—

30

mA

Current (CMOS Inputs)

CE1

≤ VCC – 0.2V,

Ind.

—

40

—

40

—

40

—

40

CE2

≤ 0.2V, VIN ≥ VCC – 0.2V,

or VIN

≤ 0.2V, f = 0

Notes:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

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