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THS4511 Datasheet(PDF) 2 Page - Texas Instruments

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Part # THS4511
Description  WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

THS4511 Datasheet(HTML) 2 Page - Texas Instruments

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ABSOLUTE MAXIMUM RATINGS
(1)
DISSIPATION RATINGS TABLE PER PACKAGE
THS4511
SLOS471 – SEPTEMBER 2005
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated
circuits be handled with appropriate precautions. Failure to observe proper handling and installation
procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
over operating free-air temperature range (unless otherwise noted)
UNIT
VSS
Supply voltage
VS– to VS+
5.5 V
VI
Input voltage
±VS
VID
Differential input voltage
4 V
IO
Output current
200 mA
Continuous power dissipation
See Dissipation Rating Table
TJ
Maximum junction temperature(2)
150°C
TJ
Maximum junction temperature, continuous operation, long term reliability(3)
125°C
TA
Operating free-air temperature range
–40°C to 85°C
Tstg
Storage temperature range
–65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
300°C
HBM
2000 V
ESD ratings
CDM
1500 V
MM
100 V
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2)
The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
(3)
The maximum junction temperature for continuous operation is limited by the package constraints. Operation above this temperature
may result in reduced reliability and/or lifetime of the device. The THS4511 incorporates a (QFN) exposed thermal pad on the underside
of the chip. This acts as a heatsink and must be connected to a thermally dissipative plane for proper power dissipation. Failure to do so
may result in exceeding the maximum junction temperature which could permanently damage the device. See TI technical brief
SLMA002 and SLMA004 for more information about utilizing the QFN thermally enhanced package.
POWER RATING
PACKAGE(1)
θ
JC
θ
JA
TA ≤ 25°C
TA = 85°C
RGT (16)
2.4°C/W
39.5°C/W
2.3 W
225 mW
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com.
2


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