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K4E640412E-TI45 Datasheet(PDF) 5 Page - Samsung semiconductor

Part # K4E640412E-TI45
Description  16M x 4bit CMOS Dynamic RAM with Extended Data Out
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4E640412E-TI45 Datasheet(HTML) 5 Page - Samsung semiconductor

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CMOS DRAM
K4E660412E,K4E640412E
Industrial Temperature
CAPACITANCE (TA=25
°C, VCC=3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A12]
CIN1
-
5
pF
Input capacitance [RAS , CAS, W, OE ]
CIN2
-
7
pF
Output capacitance [DQ0 - DQ3]
CDQ
-
7
pF
AC CHARACTERISTICS (-40
°C≤TA≤85°C, See note 2)
Test condition : VCC=3.3V
±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
-50
-60
Units
Note
Min
Max
Min
Max
Min
Max
Random read or write cycle time
tRC
74
84
104
ns
Read-modify-write cycle time
tRWC
101
113
138
ns
Access time from RAS
tRAC
45
50
60
ns
3,4,10,12
Access time from CAS
tCAC
12
13
15
ns
3,4,5,12
Access time from column address
tAA
23
25
30
ns
3,10,12
CAS to output in Low-Z
tCLZ
3
3
3
ns
3
Output buffer turn-off delay from CAS
tCEZ
3
13
3
13
3
13
ns
6,13
OE to output in Low-Z
tOLZ
3
3
3
ns
3
Transition time (rise and fall)
tT
1
50
1
50
1
50
ns
2
RAS precharge time
tRP
25
30
40
ns
RAS pulse width
tRAS
45
10K
50
10K
60
10K
ns
RAS hold time
tRSH
8
8
10
ns
CAS hold time
tCSH
35
38
40
ns
CAS pulse width
tCAS
7
5K
8
10K
10
10K
ns
16
RAS to CAS delay time
tRCD
11
33
11
37
14
45
ns
4
RAS to column address delay time
tRAD
9
22
9
25
12
30
ns
10
CAS to RAS precharge time
tCRP
5
5
5
ns
Row address set-up time
tASR
0
0
0
ns
Row address hold time
tRAH
7
7
10
ns
Column address set-up time
tASC
0
0
0
ns
Column address hold time
tCAH
7
7
10
ns
Column address to RAS lead time
tRAL
23
25
30
ns
Read command set-up time
tRCS
0
0
0
ns
Read command hold time referenced to CAS
tRCH
0
0
0
ns
8
Read command hold time referenced to RAS
tRRH
0
0
0
ns
8
Write command hold time
tWCH
7
7
10
ns
Write command pulse width
tWP
6
7
10
ns
Write command to RAS lead time
tRWL
8
8
10
ns
Write command to CAS lead time
tCWL
7
7
10
ns
Data set-up time
tDS
0
0
0
ns
9


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