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K4E640412E Datasheet(PDF) 6 Page - Samsung semiconductor |
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K4E640412E Datasheet(HTML) 6 Page - Samsung semiconductor |
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6 / 21 page  CMOS DRAM K4E660412E,K4E640412E Industrial Temperature AC CHARACTERISTICS (Continued) Parameter Symbol -45 -50 -60 Units Note Min Max Min Max Min Max Data hold time tDH 7 7 10 ns 9 Refresh period (Normal) tREF 64 64 64 ms Refresh period (L-ver) tREF 128 128 128 ms Write command set-up time tWCS 0 0 0 ns 7 CAS to W delay time tCWD 24 27 32 ns 7 RAS to W delay time tRWD 57 64 77 ns 7 Column address to W delay time tAWD 35 39 47 ns 7 CAS set-up time (CAS -before-RAS refresh) tCSR 5 5 5 ns CAS hold time (CAS -before-RAS refresh) tCHR 10 10 10 ns RAS to CAS precharge time tRPC 5 5 5 ns Access time from CAS precharge tCPA 24 28 35 ns 3 Hyper Page cycle time tHPC 17 20 25 ns 14 Hyper Page read-modify-write cycle time tHPRWC 47 47 56 ns 14 CAS precharge time (Hyper page cycle) tCP 6.5 7 10 ns RAS pulse width (Hyper page cycle) tRASP 45 200K 50 200K 60 200K ns RAS hold time from CAS precharge tRHCP 24 30 35 ns OE access time tOEA 12 13 15 ns 3 OE to data delay tOED 8 10 13 ns CAS precharge to W delay time tCPWD 36 41 52 ns Output buffer turn off delay time from OE tOEZ 3 11 3 13 3 13 ns 6 OE command hold time tOEH 5 5 5 ns Write command set-up time (Test mode in) tWTS 10 10 10 ns 11 Write command hold time (Test mode in) tWTH 10 10 10 ns 11 W to RAS precharge time (C-B-R refresh) tWRP 10 10 10 ns W to RAS hold time (C-B-R refresh) tWRH 10 10 10 ns Output data hold time tDOH 4 5 5 ns Output buffer turn off delay from RAS tREZ 3 13 3 13 3 13 ns 6,13 Output buffer turn off delay from W tWEZ 3 13 3 13 3 13 ns 6 W to data delay tWED 8 15 15 ns OE to CAS hold time tOCH 5 5 5 ns CAS hold time to OE tCHO 5 5 5 ns OE precharge time tOEP 5 5 5 ns W pulse width (Hyper Page Cycle) tWPE 5 5 5 ns RAS pulse width (C-B-R self refresh) tRASS 100 100 100 us 15,16,17 RAS precharge time (C-B-R self refresh) tRPS 74 90 110 ns 15,16,17 CAS hold time (C-B-R self refresh) tCHS -50 -50 -50 ns 15,16,17 |
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