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AS7C332MNTF18A

12/23/04, v 1.2

Alliance Semiconductor

P. 4 of 18

Functional Description

The AS7C332MNTF18A family is a high performance CMOS 32 Mbit synchronous Static Random Access Memory (SRAM)

organized as 2,097,152 words × 18 bits and incorporates a LATE Write.

write operation that improves bandwidth over flowthrough burst devices. In a normal flowthrough burst device, the write data,

command, and address are all applied to the device on the same clock edge. If a read command follows this write command,

the system must wait for one 'dead' cycle for valid data to become available. This dead cycle can significantly reduce overall

bandwidth for applications requiring random access or read-modify-write operations.

through read latency. Write data is applied one cycle after the write command and address, allowing the read pipeline to clear.

Assert R/W low to perform write cycles. Byte write enable controls write access to specific bytes, or can be tied low for full 18

bit writes. Write enable signals, along with the write address, are registered on a rising edge of the clock. Write data is applied

to the device one clock cycle later. Unlike some asynchronous SRAMs, output enable OE does not need to be toggled for write

operations; it can be tied low for normal operations. Outputs go to a high impedance state when the device is de-selected by

any of the three chip enable inputs.

Use the ADV (burst advance) input to perform burst read, write and deselect operations. When ADV is high, external addresses, chip

select, R/W pins are ignored, and internal address counters increment in the count sequence specified by the LBO control. Any

device operations, including burst, can be stalled using the CEN=1, the clock enable input.

TQFP Capacitance

*Guaranteed not tested

TQFP thermal resistance

Parameter

Symbol

Signals

Test conditions

Max

Unit

Input capacitance

Address and control pins

5

pF

I/O capacitance

I/O pins

7

pF

Description

Symbol

Typical

Units

Conditions

Thermal resistance

1

This parameter is sampled.

1 layer

40

°C/W

Test conditions follow standard test

methods and procedures for

measuring thermal impedance, per

EIA/JESD51

4 layer

22

°C/W

Thermal resistance

8

°C/W