MJE5730 MJE5731 MJE5731A

3

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMPS)

1.0

0.8

1.4

1.2

0.4

0

0.6

0.2

Figure 3. Base–Emitter Voltage

0.05

0.2

2.0

0.1

0.5

0.3

1.0

1.0

0

TC, CASE TEMPERATURE (°C)

0

50

175

0.8

0.6

0.4

0.2

75

100

125

Figure 4. Normalized Power Derating

SECOND BREAKDOWN

DERATING

THERMAL

DERATING

0.02 0.03

VBE(sat) @ IC/IB = 5.0

TJ = – 55°C

25

°C

150

°C

25

150

10

5.0

Figure 5. Forward Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

2.0

0.5

0.01

30

100

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

dc

500

µs

0.05

10

20

1.0 ms

200 300

500

1.0

0.2

50

0.1

0.02

TC = 25°C

100

µs

MJE5730

MJE5731

MJE5732

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in Figure 6.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

t, TIME (ms)

1.0

0.01

1 k

0.3

0.2

0.07

R

θJC(t) = r(t) RθJC

R

θJC = 3.125°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.01

0.7

Figure 6. Thermal Response

0.5

0.1

0.05

0.03

0.02

0.02

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

0.2

SINGLE PULSE

D = 0.5

0.05

0.1

0.02

0.01