1

Motorola Bipolar Power Transistor Device Data

Complementary Silicon Power

Plastic Transistors

. . . designed for low voltage, low–power, high–gain audio amplifier applications.

• Collector–Emitter Sustaining Voltage —

VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

• High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

• High Current–Gain — Bandwidth Product —

fT = 65 MHz (Min) @ IC = 100 mAdc

• Annular Construction for Low Leakage —

ICBO = 100 nAdc @ Rated VCB

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Base Voltage

VCB

40

Vdc

Collector–Emitter Voltage

VCEO

25

Vdc

Emitter–Base Voltage

VEB

8.0

Vdc

Collector Current — Continuous

Peak

IC

5.0

10

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

15

0.12

Watts

W/

_C

Total Power Dissipation @ TA = 25_C

Derate above 25

_C

PD

1.5

0.012

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

8.34

_C/W

Thermal Resistance, Junction to Ambient

θJA

83.4

_C/W

16

20

Figure 1. Power Derating

T, TEMPERATURE (

°C)

0

40

60

100

120

160

12

1.6

0

1.2

8.0

0.8

4.0

0.4

80

140

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE200/D

MJE200

MJE210

5 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

25 VOLTS

15 WATTS

*Motorola Preferred Device

*

NPN

PNP

*

CASE 77–08

TO–225AA

REV 7