MJE18009 MJF18009

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

VCEO(sus)

450

Vdc

Collector Cutoff Current

(VCE = Rated VCEO, IB = 0)

ICEO

100

µAdc

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)

@ TC = 25°C

@ TC = 125°C

@ TC = 125°C

ICES

100

500

100

µAdc

Emitter–Cutoff Current

(VEB = 9 Vdc, IC = 0)

IEBO

100

µAdc

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

(IC = 3 Adc, IB = 0.3 Adc)

(IC = 5 Adc, IB = 1 Adc)

(IC = 7 Adc, IB = 1.4 Adc)

VBE(sat)

0.8

0.9

0.9

1.1

1.15

1.25

Vdc

Collector–Emitter Saturation Voltage

(IC = 3 Adc, IB = 0.3 Adc)

@ TC = 25°C

@ TC = 125°C

VCE(sat)

0.3

0.3

0.6

0.65

Vdc

(IC = 5 Adc, IB = 1 Adc)

@ TC = 25°C

@ TC = 125°C

0.3

0.3

0.6

0.65

(IC = 7 Adc, IB = 1.4 Adc)

@ TC = 25°C

@ TC = 125°C

0.35

0.4

0.7

0.9

DC Current Gain

(IC = 1.5 Adc, VCE = 5 Vdc)

@ TC = 25°C

@ TC = 125°C

hFE

14

29

34

—

(IC = 5 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

10

8

13

11.5

(IC = 7 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

7

5

10

7.5

—

(IC = 10 mAdc, VCE = 5 Vdc)

@ TC = 25°C

10

25

—

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

fT

12

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

Cob

150

200

pF

Input Capacitance

(VEB = 8 Vdc)

Cib

2750

3500

pF

DYNAMIC SATURATION VOLTAGE

Dynamic Saturation

Voltage:

Determined 1

µs and

3

µs respectively after

rising IB1 reaches

90% of final IB1

IC = 3 Adc

IB1 = 300 mAdc

VCC = 300 V

@ 1

µs

@ TC = 25°C

@ TC = 125°C

VCE(dsat)

8

13.5

V

Dynamic Saturation

Voltage:

Determined 1

µs and

3

µs respectively after

rising IB1 reaches

90% of final IB1

IB1 = 300 mAdc

VCC = 300 V

@ 3

µs

@ TC = 25°C

@ TC = 125°C

4

8

µs and

3

µs respectively after

rising IB1 reaches

90% of final IB1

IC = 7 Adc

IB1 = 1.4 Adc

VCC = 300 V

@ 1

µs

@ TC = 25°C

@ TC = 125°C

15

21

90% of final IB1

IB1 = 1.4 Adc

VCC = 300 V

@ 3

µs

@ TC = 25°C

@ TC = 125°C

2

2.7