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32C408BRPFS-20 Datasheet(PDF) 7 Page - Maxwell Technologies |
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32C408BRPFS-20 Datasheet(HTML) 7 Page - Maxwell Technologies |
7 / 11 page 7 All data sheets are subject to change without notice ©2002 Maxwell Technologies All rights reserved. 4 Megabit (512K x 8-Bit) SRAM 32C408B 05.02.02 Rev 7 FIGURE 4. TIMING WAVEFORM OF READ CYCLE(2) (WE = V IH) 1. WE is high for read cycle. 2. All read cycle timing is referenced from the last valid address to the first transition address. 3. t HZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or V OL levels. 4. At any given temperature and voltage condition, t HZ(max) is less than tLZ(min) both for a given device and from device to device. 5. Transition is measured +200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested. 6. Device is continuously selected with CS = V IL. 7. Address valid prior to coincident with CS transition low. 8. For common I/O applications, minimization or elimination of bus contention is necessary during read and write cycle. FIGURE 5. SRAM HEAVY ION CROSS SECTION |
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