MJD44H11-001 datasheet(5/6 Pages) ONSEMI

Part #	MJD44H11-001

Description	SILICON POWER TRANSISTORS

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD44H11 (NPN) MJD45H11 (PNP)

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IC, COLLECTOR CURRENT (AMPS)

VCE = 4 V

TJ = 125°C

25°C

−40 °C

1000

0.1

Figure 4. MJD44H11 DC Current Gain

10

110

100

Figure 5. MJD45H11 DC Current Gain

Figure 6. MJD44H11 Current Gain

versus Temperature

Figure 7. MJD45H11 Current Gain

versus Temperature

IC/IB = 10

TJ = 25°C

0.1

Figure 8. MJD44H11 On−Voltages

IC, COLLECTOR CURRENT (AMPS)

1

0.8

1.2

0.4

0

0.6

0.2

110

TJ = 25°C

Figure 9. MJD45H11 On−Voltages

VCE = 1 V

IC/IB = 10

TJ = 25°C

0.1

IC, COLLECTOR CURRENT (AMPS)

1

0.8

1.2

0.4

0

0.6

0.2

1

10

1000

0.1

10

110

100

VCE = 1 V

IC, COLLECTOR CURRENT (AMPS)

VCE = 4 V

1000

0.1

10

110

100

TJ = 25°C

1 V

TJ = 125°C

25°C

−40 °C

1000

0.1

10

110

100

VCE = 1 V

VBE(sat)

VCE(sat)

VBE(sat)

VCE(sat)

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