© Semiconductor Components Industries, LLC, 2014

November, 2014 − Rev. 7

1

Publication Order Number:

MJE15028/D

MJE15028, MJE15030 (NPN),

MJE15029, MJE15031 (PNP)

Complementary Silicon

Plastic Power Transistors

These devices are designed for use as high−frequency drivers in

audio amplifiers.

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

MJE15028G, MJE15029G

MJE15030G, MJE15031G

120

150

Vdc

Collector−Base Voltage

MJE15028G, MJE15029G

MJE15030G, MJE15031G

120

150

Vdc

Emitter−Base Voltage

5.0

Vdc

Collector Current − Continuous

8.0

Adc

Collector Current − Peak

16

Adc

Base Current

2.0

Adc

Total Device Dissipation

Derate above 25

°C

50

0.40

W

W/

_C

Total Device Dissipation

Derate above 25

°C

2.0

0.016

W

W/

_C

Operating and Storage Junction

Temperature Range

−65 to +150

_C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

2.5

_C/W

Thermal Resistance, Junction−to−Ambient

62.5

_C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

8 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

120−150 VOLTS, 50 WATTS

TO−220

CASE 221A

STYLE 1

1

http://onsemi.com

MARKING DIAGRAM

2

3

MJE150xx = Device Code

x = 28, 29, 30, or 31

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

MJE150xxG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

4

1

BASE

3

EMITTER

COLLECTOR

2,4

1

BASE

3

EMITTER

COLLECTOR

2,4

NPN

PNP