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MJD50 Datasheet(PDF) 3 Page - ON Semiconductor |
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MJD50 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page MJD47 MJD50 3 Motorola Bipolar Power Transistor Device Data 0.02 IC, COLLECTOR CURRENT (AMPS) 1 0.8 1.4 1.2 0.4 0 0.6 0.2 VBE(sat) @ IC/IB = 5 V VBE(on) @ VCE = 4 V VCE(sat) @ IC/IB = 5 V 0.02 IC, COLLECTOR CURRENT (AMPS) 2 0.06 0.2 2 40 10 100 VCE = 10 V TJ = 150°C 60 0.1 0.6 25 °C – 55 °C 20 0.04 0.4 1 200 4 6 Figure 3. DC Current Gain t, TIME (ms) 1 0.01 1 k 0.3 0.2 0.07 R θJC(t) = r(t) RθJC R θJC = 8.33°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.01 Figure 4. “On” Voltages 0.7 Figure 5. Thermal Response 0.5 0.1 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 0.06 0.2 2 0.1 0.6 0.04 0.4 1 0.2 SINGLE PULSE D = 0.5 0.05 TJ = 25°C 0.1 0.02 0.01 5 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 0.005 500 1 0.2 0.05 0.02 SECOND BREAKDOWN LIMIT THERMAL LIMIT @ 25 °C WIRE BOND LIMIT 20 200 10 TC ≤ 25°C 100 µs 1 ms dc 0.01 0.1 0.5 2 5 Figure 6. Active Region Safe Operating Area 100 50 300 CURVES APPLY BELOW RATED VCEO MJD50 MJD47 500 µs There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Fig- ure 5. At high case temperatures, thermal limitations will re- duce the power that can be handled to values less than the limitations imposed by second breakdown. |
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