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MJD2955 Datasheet(PDF) 4 Page - ON Semiconductor |
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MJD2955 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page MJD2955 MJD3055 4 Motorola Bipolar Power Transistor Device Data Figure 6. “On” Voltages, MJD2955 2 0.1 0 0.2 0.3 0.5 1 3 10 0.8 1.6 1.2 0.4 5 TJ = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE @ VCE = 3 V Figure 7. Switching Time Test Ciruit Figure 8. Thermal Response t, TIME (ms) 1 0.01 0.02 0.7 0.2 0.1 0.05 0.02 0.05 1 2 5 10 20 50 100 200 500 R θJC(t) = r(t) RθJC R θJC = 6.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D = 0.5 0.2 0.05 0.02 0.01 SINGLE PULSE 0.1 0.1 0.5 0.2 1 k 0.5 0.3 0.07 0.03 0.03 0.3 3 30 300 IC, COLLECTOR CURRENT (AMP) 2 +11 V 25 µs 0 –9 V RB –4 V D1 SCOPE VCC + 30 V RC tr, tf ≤ 10 ns DUTY CYCLE = 1% 51 D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.01 Figure 9. Maximum Forward Bias Safe Operating Area 0.01 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 0.02 5 2 1 10 0.5 0.1 TJ = 150°C 1ms dc 3 0.3 0.6 1 2 60 20 40 WIRE BOND LIMIT THERMAL LIMIT TC = 25°C (D = 0.1) SECOND BREAKDOWN LIMIT 10 6 4 500 µs 0.03 0.05 100 µs 5ms FORWARD BIAS SAFE OPERATING AREA INFORMATION There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. The data of Figure 9 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Fig- ure 8. At high case temperatures, thermal limitations will re- duce the power that can be handled to values less than the limitations imposed by second breakdown. |
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