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TSM2832CY Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM2832CY Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  TSM2832 1-1 2003/12 rev. A TSM2832 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 60mΩ RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 90mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities 2.5V operating voltage Block Diagram Ordering Information Part No. Packing Package TSM2832CY Tape & Reel 1kpcs per reel SOT-89 Absolute Maximum Rating (Ta = 25℃ unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20V V Gate-Source Voltage VGS ± 8 V Continuous Drain Current ID 3.6 A Pulsed Drain Current IDM 10 A Ta = 25 oC 1.5 Maximum Power Dissipation Ta = 75 oC PD 1.0 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8” from case) TL 5 S Junction to Ambient Thermal Resistance (PCB mounted) Rθja 65 oC/W Note: Surface mounted on FR4 board t<=5sec. |
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