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TSM2311CX Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM2311CX Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 3 page TSM2311 1-1 2003/12 rev. B TSM2311 20V P-Channel Enhancement Mode MOSFET VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 4.0A = 55mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.5A = 85mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. Packing Package TSM2311CX Tape & Reel SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20V V Gate-Source Voltage VGS ± 8 V Continuous Drain Current ID - 4 A Pulsed Drain Current IDM - 20 A Ta = 25 oC 1.25 Maximum Power Dissipation Ta = 75 oC PD 0.8 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8” from case) TL 5 S Junction to Ambient Thermal Resistance (PCB mounted) Rθja 100 oC/W Note: Surface mounted on FR4 board t<=5sec. Pin assignment: 1. Gate 2. Source 3. Drain |
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