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TSD2444CXQ Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSD2444CXQ Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 3 page TSD2444 1-3 2003/12 rev. A TSD2444 Low Vce(sat) NPN Transistor BVCEO = 20V Ic = 1A VCE (SAT), = 0.2V(typ.) @Ic / Ib = 0.5A / 50mA Features Low VCE (SAT). Excellent DC current gain characteristics Structure Epitaxial planar type. Complementary to TSB1590CX Ordering Information Part No. Packing Package TSD2444CX Tape & Reel SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 40V V Collector-Emitter Voltage VCEO 20V V Emitter-Base Voltage VEBO 5 V DC 1 Collector Current Pulse IC 1.5 (note 1) A Collector Power Dissipation PD 0.225 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw = 10mS Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 10uA, IE = 0 BVCBO 40 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 20 -- -- V Emitter-Base Breakdown Voltage IE = 10uA, IC = 0 BVEBO 5 -- -- V Collector Cutoff Current VCB = 20V, IE = 0 ICBO -- -- 0.5 uA Emitter Cutoff Current VEB = 4V, IC = 0 IEBO -- -- 0.5 uA Collector-Emitter Saturation Voltage IC / IB = 500mA / 50mA VCE(SAT) -- 0.2 0.4 V DC Current Transfer Ratio VCE = 2V, IC = 0.1A hFE 82 -- 390 Transition Frequency VCE = 5V, IC = 50mA, f = 100MHz fT -- 150 -- MHz Output Capacitance VCB = 10V, f=1MHz Cob -- 15 -- pF Note : pulse test: pulse width <=380uS, duty cycle <=2% Classification Of hFE Rank P Q R Range 82 - 180 120 - 270 180 - 390 Pin assignment: 1. Base 2. Emitter 3. Collector |
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