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TSCD114DCU6 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSCD114DCU6 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 4 page TSCD114D 2-4 2003/12 rev. A Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Vcc= 5V, Io= 100uA Vin(off) -- -- 0.3 V Input Voltage Vo= 0.3V, Io= 1mA Vin(on) 3 -- -- V Output Voltage Io/Iin= 5mA/ 0.25mA Vo(on) -- 0.1 0.3 V Input Current Vin= 5V Iin -- -- 0.88 mA Output Current Vcc= 50V, Vin= 0V Io(off) -- -- 0.5 uA DC Current Gain Vo= 5V, Io= 5mA Gi 68 -- -- Input Resistance R1 |0.7| 10 |1.3| KΩ Resistance Ratio R2/R1 |0.8| 4.7 |1.2| Transition Frequency Vce= 10V, Ie= 5mA, f= 100MHz (note 1) ft -- 250 -- MHz Note : 1. Transition frequency of the device. 2. Pulse test: pulse width <=380uS, duty cycle <=2% |
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