1

Motorola Bipolar Power Transistor Device Data

Advance Information

SWITCHMODE Series

NPN Silicon Power Transistors

These transistors are designed for high–voltage, high–speed, power switching in

inductive circuits where fall time is critical. They are particularly suited for

line–operated switchmode applications. The MJ16022 is a selected high–gain version

of the MJ16020 for applications where drive current is limited.

Features:

• Fast Switching Times:

30 ns (Typ) Inductive Fall Time

50 ns (Typ) Inductive Crossover Time

800 ns (Typ) Inductive Storage Time

• 100_C Performance Specified for:

Reverse–Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Typical Applications:

• Switching Regulators

• Inverters

• Solenoids and Relay Drivers

• Motor Controls

• Deflection Circuits

Rating

Symbol

Max

Unit

Collector–Emitter Sustaining Voltage

VCEO

450

Vdc

Collector–Emitter Breakdown Voltage

VCEV

850

Vdc

Emitter–Base Voltage

VEB

6

Vdc

Collector Current — Continuous

— Peak (1)

IC

ICM

30

40

Adc

Base Current — Continuous

— Peak (1)

IB

IBM

20

30

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

250

1.42

Watts

W/

_C

Operating and Storage Temperature

TJ, Tstg

– 65 to 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance — Junction to Case

R

θJC

0.7

_C/W

Maximum Lead Temperature for Soldering Purposes:

1/8

″ from Case for 5 Seconds

TL

275

_C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ16020/D

NPN SILICON POWER

TRANSISTOR

30 AMPERES

450 VOLTS

MJ16020

MJ16022

CASE 197A–05

TO–204AE

REV 7