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TE28F640J3C-120 Datasheet(PDF) 19 Page - Intel Corporation |
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TE28F640J3C-120 Datasheet(HTML) 19 Page - Intel Corporation |
19 / 72 page 256-Mbit J3 (x8/x16) Datasheet 19 6.0 Electrical Specifications 6.1 DC Current Characteristics Table 6. DC Current Characteristics (Sheet 1 of 2) VCCQ 2.7 - 3.6V Test Conditions Notes VCC 2.7 - 3.6V Symbol Parameter Typ Max Unit ILI Input and VPEN Load Current ±1 µA VCC = VCC Max; VCCQ = VCCQ Max VIN = VCCQ or GND 1 ILO Output Leakage Current ±10 µA VCC= VCC Max; VCCQ = VCCQ Max VIN = VCCQ or GND 1 ICCS VCC Standby Current 50 120 µA CMOS Inputs, VCC = VCC Max, Device is disabled (see Table 13, “Chip Enable Truth Table” on page 33), RP# = VCCQ ± 0.2 V 1,2,3 0.71 2 mA TTL Inputs, VCC = VCC Max, Device is disabled (see Table 13), RP# = VIH ICCD VCC Power-Down Current 50 120 µA RP# = GND ± 0.2 V, IOUT (STS) = 0 mA ICCR VCC Page Mode Read Current 4- word Page 15 20 mA CMOS Inputs, VCC = VCC Max, VCCQ = VCCQ Max using standard 4 word page mode reads. Device is enabled (see Table 13) f = 5 MHz, IOUT = 0 mA 1,3 24 29 mA CMOS Inputs,VCC = VCC Max, VCCQ = VCCQ Max using standard 4 word page mode reads. Device is enabled (see Table 13) f = 33 MHz, IOUT = 0 mA 8- word Page 10 15 mA • CMOS Inputs, VCC = VCC Max, VCCQ = VCCQ Max using standard 8 word page mode reads. • Device is enabled (see Table 13) f = 5 MHz, IOUT = 0 mA 30 54 mA • CMOS Inputs,VCC = VCC Max, VCCQ = VCCQ Max using standard 8 word page mode reads. • Device is enabled (see Table 13) f = 33 MHz, IOUT = 0 mA • Density: 128-, 64-, and 32- Mbit 26 46 mA • CMOS Inputs,VCC = VCC Max, VCCQ = VCCQ Max using standard 8 word page mode reads. • Device is enabled (see Table 13) f = 33 MHz, IOUT = 0 mA • Density: 256Mbit ICCW VCC Program or Set Lock- Bit Current 35 60 mA CMOS Inputs, VPEN = VCC 1,4 40 70 mA TTL Inputs, VPEN = VCC |
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