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FPD3000SOT89 Datasheet(PDF) 4 Page - Filtronic Compound Semiconductors |
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FPD3000SOT89 Datasheet(HTML) 4 Page - Filtronic Compound Semiconductors |
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4 / 8 page  FPD3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT Phone: +1 408 850-5790 http:// www.filtronic.co.uk/semis Revised: 01/05/05 Fax: +1 408 850-5766 Email: sales@filcsi.com • TYPICAL TUNED RF PERFORMANCE Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS = 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for maximum output power at 1dB gain compression. Power Transfer Characteristic 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 11.0 13.0 15.0 17.0 19.0 21.0 23.0 Input Power (dBm) -0.75 -0.25 0.25 0.75 1.25 1.75 2.25 2.75 3.25 Pout (dBm) Comp Point Drain Efficiency and PAE 0% 5% 10% 15% 20% 25% 30% 35% 40% 45% 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 Input Power (dBm) 0% 5% 10% 15% 20% 25% 30% 35% 40% 45% PAE Eff. |
Similar Part No. - FPD3000SOT89 |
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Similar Description - FPD3000SOT89 |
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