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FPD1500DFN Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors |
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FPD1500DFN Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors |
1 / 5 page FPD1500DFN LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT • PERFORMANCE (1850 MHz) ♦ 27 dBm Output Power (P 1dB) ♦ 18 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Featuring Lead Free Finish Package • DESCRIPTION AND APPLICATIONS The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 μm x 1500 μm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. The FPD1500DFN is available in die form and in other packages. Typical applications include drivers or output stages in PCS/Cellular base station high-intercept- point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems. • ELECTRICAL SPECIFICATIONS AT 22°C Parameter Symbol Test Conditions Min Typ Max Units RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL Power at 1dB Gain Compression P1dB VDS = 5 V; IDS = 50% IDSS 27 dBm Small-Signal Gain SSG VDS = 5 V; IDS = 50% IDSS 18 dB Power-Added Efficiency PAE VDS = 5 V; IDS = 50% IDSS; POUT = P1dB 45 % Noise Figure NF VDS = 5 V; IDS = 50% IDSS 1.2 dB Output Third-Order Intercept Point (from 15 to 5 dB below P1dB) IP3 VDS = 5V; IDS = 50% IDSS Matched for optimal power Matched for best IP3 40 42 dBm Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 375 465 550 mA Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 750 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 400 mS Gate-Source Leakage Current IGSO VGS = -5 V 1 15 μA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 1.5 mA 0.7 0.9 1.3 V Gate-Source Breakdown Voltage |VBDGS| IGS = 1.5 mA 12 18 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 1.5 mA 12 18 V Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 11/14/05 Fax: +1 408 850-5766 Email: sales@filcsi.com |
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