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MGP7N60E Datasheet(PDF) 1 Page - ON Semiconductor |
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1 / 5 page 1 Motorola IGBT Device Data Designer's™ Data Sheet Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high tempera- ture short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an energy efficient, ESD protected, and short circuit rugged device. • Industry Standard TO–220 Package • High Speed: Eoff = 70 mJ/A typical at 125°C • High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V • Low On–Voltage 2.0 V typical at 5.0 A, 125°C • Robust High Voltage Termination • ESD Protection Gate–Emitter Zener Diodes MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VGE ± 20 Vdc Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) IC25 IC90 ICM 10 7.0 14 Adc Apk Total Power Dissipation @ TC = 25°C Derate above 25 °C PD 81 0.65 Watts W/ °C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to 150 °C Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) tsc 10 ms Thermal Resistance — Junction to Case – IGBT Thermal Resistance — Junction to Ambient R θJC R θJA 1.5 65 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 5 seconds TL 260 °C Mounting Torque, 6–32 or M3 screw 10 lbf Sin (1.13 NSm) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. Order this document by MGP7N60E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGP7N60E IGBT IN TO–220 7.0 A @ 90 °C 10 A @ 25 °C 600 VOLTS SHORT CIRCUIT RATED LOW ON–VOLTAGE CASE 221A–09 STYLE 9 TO–220AB C E G G C E © Motorola, Inc. 1998 |
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