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Motorola IGBT Device Data

Designer's™ Data Sheet

Insulated Gate Bipolar Transistor

N–Channel Enhancement–Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced

termination scheme to provide an enhanced and reliable high

voltage–blocking capability. Its new 600 V IGBT technology is

specifically suited for applications requiring both a high tempera-

ture short circuit capability and a low VCE(on). It also provides fast

switching characteristics and results in efficient operation at high

frequencies. This new E–series introduces an energy efficient,

ESD protected, and short circuit rugged device.

• Industry Standard TO–220 Package

• High Speed: Eoff = 70 mJ/A typical at 125°C

• High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V

• Low On–Voltage 2.0 V typical at 5.0 A, 125°C

• Robust High Voltage Termination

• ESD Protection Gate–Emitter Zener Diodes

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCES

600

Vdc

Collector–Gate Voltage (RGE = 1.0 MΩ)

VCGR

600

Vdc

Gate–Emitter Voltage — Continuous

VGE

± 20

Vdc

Collector Current — Continuous @ TC = 25°C

IC25

IC90

ICM

10

7.0

14

Adc

Apk

Total Power Dissipation @ TC = 25°C

Derate above 25

°C

PD

81

0.65

Watts

W/

°C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 55 to 150

°C

Short Circuit Withstand Time

(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)

tsc

10

ms

Thermal Resistance — Junction to Case – IGBT

R

θJC

R

θJA

1.5

65

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 5 seconds

TL

260

°C

Mounting Torque, 6–32 or M3 screw

10 lbf

Sin (1.13 NSm)

(1) Pulse width is limited by maximum junction temperature. Repetitive rating.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s is a trademark of Motorola, Inc.

Order this document

by MGP7N60E/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MGP7N60E

IGBT IN TO–220

7.0 A @ 90

°C

10 A @ 25

°C

600 VOLTS

SHORT CIRCUIT RATED

LOW ON–VOLTAGE

CASE 221A–09

STYLE 9

TO–220AB

C

E

G

G

C

E

© Motorola, Inc. 1998