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MGP4N60E Datasheet(PDF) 4 Page - ON Semiconductor

Part No. MGP4N60E
Description  Insulated Gate Bipolar Transistor
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MGP4N60E
4
Motorola IGBT Device Data
Figure 7. Turn–Off Losses versus
Gate Resistance
Figure 8. Turn–Off Losses versus
Junction Temperature
Figure 9. Turn–Off Losses versus
Collector Current
Figure 10. Reverse Biased Safe
Operating Area
45
5
RG, GATE RESISTANCE (OHMS)
0.2
0.1
TJ, JUNCTION TEMPERATURE (°C)
150
–50
0.05
0
23
0
IC, COLLECTOR CURRENT (AMPS)
0.10
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
1
10
1
0
15
25
–25
0
25
0.10
0.20
1
10
100
1000
35
0.15
50
75
100
125
0.15
0.05
0.20
TJ = 125°C
VDD = 360 V
VGE = 15 V
IC = 3.0 A
2.0 A
1.0 A
VCC = 360 V
VGE = 15 V
RG = 20 W
IC = 3.0 A
2.0 A
1.5 A
TJ = 125°C
VCC = 360 V
VGE = 15 V
RG = 20 W
TJ = 125°C
RGE = 20 W
VGE = 15 V




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