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MGP4N60E Datasheet(PDF) 3 Page - ON Semiconductor

Part No. MGP4N60E
Description  Insulated Gate Bipolar Transistor
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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 3 page
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MGP4N60E
3
Motorola IGBT Device Data
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
8
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
15
6
3
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
13
17
5
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
15
7.5
2.5
0
TJ, JUNCTION TEMPERATURE (°C)
–25
–50
2.0
1.8
1.6
1.4
0
15
510
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
800
400
200
0
Qg, TOTAL GATE CHARGE (nC)
5
0
20
16
12
4
0
10
0
24
79
11
25
50
100
75
125
150
15
25
20
25
15
8
TJ = 25°C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
TJ = 125°C
25
°C
VCE = 100 V
5
ms PULSE WIDTH
VGE = 15 V
80
ms PULSE WIDTH
IC = 3.0 A
1.5 A
2.0 A
Cies
Coes
Cres
TJ = 25°C
VGE = 0 V
QT
Q2
Q1
TJ = 25°C
VCC = 300 V
IC = 3.0 A
12
9
6
8
0
15
6
3
0
24
TJ = 125°C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
12
9
6
5.0
12.5
10
600
20




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