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MGP4N60E Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MGP4N60E
Description  Insulated Gate Bipolar Transistor
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MGP4N60E
2
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)CES
600
870
Vdc
mV/
°C
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
V(BR)ECS
15
Vdc
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES
10
200
µAdc
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
IGES
50
mAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 1.5 Adc)
(VGE = 15 Vdc, IC = 1.5 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 3.0 Adc)
VCE(on)
1.6
1.5
2.0
1.9
2.4
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
4.0
6.0
10
8.0
Vdc
mV/
°C
Forward Transconductance (VCE = 10 Vdc, IC = 3.0 Adc)
gfe
1.8
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Cies
342
pF
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Coes
40
Transfer Capacitance
f = 1.0 MHz)
Cres
3.0
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
(V
360 Vd
I
3 0 Ad
td(on)
34
ns
Rise Time
(VCC = 360 Vdc, IC = 3.0 Adc,
V
15 Vd
L
300 H
tr
30
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 mH,
RG = 20 Ω)
td(off)
36
Fall Time
RG = 20 Ω)
Energy losses include “tail”
tf
216
Turn–Off Switching Loss
Eoff
0.10
0.15
mJ
Turn–On Delay Time
(V
360 Vd
I
3 0 Ad
td(on)
33
ns
Rise Time
(VCC = 360 Vdc, IC = 3.0 Adc,
V
15 Vd
L
300 H
tr
32
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 mH,
RG = 20 Ω, TJ = 125°C)
td(off)
56
Fall Time
RG = 20 Ω, TJ = 125 C)
Energy losses include “tail”
tf
340
Turn–Off Switching Loss
Eoff
0.165
mJ
Gate Charge
(V
360 Vdc I
3 0 Adc
QT
18.1
nC
(VCC = 360 Vdc, IC = 3.0 Adc,
VGE = 15 Vdc)
Q1
3.8
VGE = 15 Vdc)
Q2
7.8
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25
″ from package to emitter bond pad)
LE
7.5
nH
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.




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