MGP20N60U

2

Motorola IGBT Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–to–Emitter Breakdown Voltage

(VGE = 0 Vdc, IC = 25 µAdc)

Temperature Coefficient (Positive)

V(BR)CES

600

—

—

870

—

—

Vdc

mV/

°C

Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)

V(BR)ECS

15

—

—

Vdc

Zero Gate Voltage Collector Current

(VCE = 600 Vdc, VGE = 0 Vdc)

(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)

ICES

—

—

—

—

10

200

µAdc

Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)

IGES

—

—

50

µAdc

ON CHARACTERISTICS (1)

Collector–to–Emitter On–State Voltage

(VGE = 15 Vdc, IC = 5.0 Adc)

(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)

(VGE = 15 Vdc, IC = 10 Adc)

VCE(on)

—

—

—

1.4

1.3

1.7

1.7

—

2.0

Vdc

Gate Threshold Voltage

(VCE = VGE, IC = 1.0 mAdc)

Threshold Temperature Coefficient (Negative)

VGE(th)

3.0

—

5.0

10

7.0

—

Vdc

mV/

°C

Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc)

gfe

—

7.0

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vdc V

0 Vdc

Cies

—

1060

—

pF

Output Capacitance

(VCE = 25 Vdc, VGE = 0 Vdc,

f = 1.0 MHz)

Coes

—

99

—

Transfer Capacitance

f = 1.0 MHz)

Cres

—

15

—

SWITCHING CHARACTERISTICS (1)

Turn–On Delay Time

(V

360 Vd

I

10 Ad

td(on)

—

43

—

ns

Rise Time

(VCC = 360 Vdc, IC = 10 Adc,

V

15 Vd

L

300 H

tr

—

45

—

Turn–Off Delay Time

VGE = 15 Vdc, L = 300 mH,

RG = 20 Ω)

td(off)

—

144

—

Fall Time

RG = 20 Ω)

Energy losses include “tail”

tf

—

175

—

Turn–Off Switching Loss

Eoff

—

340

—

mJ

Turn–On Delay Time

(V

360 Vd

I

10 Ad

td(on)

—

43

—

ns

Rise Time

(VCC = 360 Vdc, IC = 10 Adc,

V

15 Vd

L

300 H

tr

—

56

—

Turn–Off Delay Time

VGE = 15 Vdc, L = 300 mH,

RG = 20 Ω, TJ = 125°C)

td(off)

—

235

—

Fall Time

RG = 20 Ω, TJ = 125 C)

Energy losses include “tail”

tf

—

220

—

Turn–Off Switching Loss

Eoff

—

625

—

mJ

Gate Charge

(V

360 Vdc I

10 Adc

QT

—

57

—

nC

(VCC = 360 Vdc, IC = 10 Adc,

VGE = 15 Vdc)

Q1

—

12

—

VGE = 15 Vdc)

Q2

—

25

—

INTERNAL PACKAGE INDUCTANCE

Internal Emitter Inductance

(Measured from the emitter lead 0.25

″ from package to emitter bond pad)

LE

—

7.5

—

nH

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.