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MC78LC28NTR Datasheet(PDF) 4 Page - ON Semiconductor |
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MC78LC28NTR Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 14 page MC78LC00 Series http://onsemi.com 4 ELECTRICAL CHARACTERISTICS (Vin = Vout(nom.) + 1.0 V, Cin = 1.0 µF, Cout = 1.0 µF, TJ = 25°C, unless otherwise noted.) (Note 11) HT SUFFIX Characteristic Symbol Min Typ Max Unit Output Voltage 30HT1 Suffix (Vin = 5.0 V) 33HT1 Suffix (Vin = 5.0 V) 40HT1 Suffix (Vin = 6.0 V) 50HT1 Suffix (Vin = 7.0 V) 2.950 3.218 3.900 4.875 3.0 3.3 4.0 5.0 3.075 3.382 4.100 5.125 V Line Regulation Vin = [VO + 1.0] V to 10 V, IO = 1.0 mA Regline − 0.05 0.2 %/V Load Regulation (IO = 1.0 to 10 mA) 30HT1 Suffix (Vin = 5.0 V) 33HT1 Suffix (Vin = 6.0 V) 40HT1 Suffix (Vin = 7.0 V) 50HT1 Suffix (Vin = 8.0 V) Regload − − − − 40 40 50 60 60 60 70 90 mV Output Current (Note 12) 30HT1 Suffix (Vin = 5.0 V) 33HT1 Suffix (Vin = 6.0 V) 40HT1 Suffix (Vin = 7.0 V) 50HT1 Suffix (Vin = 8.0 V) IO 35 35 45 55 50 50 65 80 − − − − mA Dropout Voltage 30HT1 Suffix (IO = 1.0 mA) 33HT1 Suffix (IO = 1.0 mA) 40HT1 Suffix (IO = 1.0 mA) 50HT1 Suffix (IO = 1.0 mA) Vin − VO − − − − 40 35 25 25 60 53 38 38 mV Quiescent Current 30HT1 Suffix (Vin = 5.0 V) 33HT1 Suffix (Vin = 5.0 V) 40HT1 Suffix (Vin = 6.0 V) 50HT1 Suffix (Vin = 7.0 V) ICC − − − − 1.1 1.1 1.2 1.3 3.3 3.3 3.6 3.9 mA Output Voltage Temperature Coefficient TC − ±100 − ppm/ °C 7. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL−STD−883, Method 3015 Machine Model Method 200 V 8. Latch up capability (85 °C) "100 mA 9. Maximum package power dissipation limits must be observed. PD + TJ(max) * TA R qJA 10. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 11. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible. 12. Output Current is measured when Vout = VO1 − 3% where VO1 = Vout at Iout = 0 mA. |
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