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MGP15N35CL, MGB15N35CL, MGC15N35CL http://onsemi.com 5 100 20 18 16 14 12 10 8 6 4 2 0 250 500 750 1000 20 18 16 14 12 10 8 6 4 2 0 250 500 750 1000 20 16 12 8 4 0 0 –25 –50 25 50 75 100 125 150 20 16 12 8 4 0 4 2 0 6 8 1012 1416 30 25 20 15 5 0 2 1 03 4 5 7 8 9 10 6 20 16 12 8 4 0 25 125 0 50 75 175 150 18 14 10 6 2 25 °C 150 °C VCC = 50 V VGE = 5.0 V RG = 1000 Ω INDUCTOR (mH) TEMPERATURE ( °C) TC, CASE TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPS) RG, GATE RESISTANCE (OHMS) RG, GATE RESISTANCE (OHMS) VCC = 50 V VGE = 5.0 V RG = 1000 Ω 3.0 mH 6.0 mH td(off) tf td(off) tf td(off) tf VCC = 300 V VGE = 5.0 V Tj = 150°C IC = 10 A L = 300 µH VCC = 300 V VGE = 5.0 V RG = 1000 Ω IC = 10 A L = 300 µH 10 VCC = 300 V VGE = 5.0 V Tj = 25°C IC = 10 A L = 300 µH 18 14 10 6 2 2 6 10 14 18 VCC = 300 V VGE = 5.0 V RG = 1000 Ω Tj = 150 °C L = 300 µH td(off) tf Figure 7. Switching Speed versus Gate Resistance Figure 8. Switching Speed versus Gate Resistance Figure 9. Switching Speed versus Case Temperature Figure 10. Total Switching Losses versus Collector Current Figure 11. Latch Current versus Inductor (Typical) Figure 12. Latch Current versus Temperature (Typical) |
