G -LINK
GLT44108
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Preliminary Aug 1999 (Rev.2.1)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No.24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 6 -
Parameter
40 ns
50 ns
60 ns
Symbol
MIN.
MAX.
MIN.
MAX.
MIN.
MAX. Unit
Notes
WE Pulse Width
tWP
6
-
7
-
10
-
ns
10
WE Lead Time Referenced to RAS
tRWL
13
-
17
-
15
-
ns
WE Lead Time Referenced to CAS
tCWL
13
-
14
-
15
-
ns
Data-In Setup Time
tDS
0
-
0
-
0
-
ns
11
Data-In Hold Time
tDH
6
-
7
-
10
-
ns
11
Data Hold Time Referenced to RAS
tDHR
33
-
40
-
45
-
ns
6
Refresh Time(256cycles)
tREF
-
8
-
8
-
8
ms
WE Setup Time
tWCS
0
-
0
-
0
-
ns
5
RAS to WE Delay Time
tRWD
60
-
70
-
85
-
ns
5
CAS to WE Delay Time
tCWD
28
-
33
-
38
-
ns
5
Column Address to WE Delay Time
tAWD
38
-
43
-
53
-
ns
5
CAS Setup Time( CAS before RAS
Refresh)
tCSR
5
-
5
-
5
-
ns
CAS Hold Time( CAS before RAS
Refresh)
tCHR
10
-
10
-
10
-
ns
RAS to CAS Precharge Time
tRPC
5
-
5
-
5
-
ns
CAS Precharge Time(CBR Counter Test
Cycle)
tCPT
20
-
20
-
20
-
ns
Access Time from CAS Precharge
tCPA
-
25
-
30
-
35
ns
3
Fast Page mode Read/Write Cycle Time
tPC
30
-
35
-
40
-
ns
Fast Page mode Read Modify Write Cycle
Time
tPRWC
65
-
80
-
90
-
ns
CAS Precharge Time(Fast Page mode)
tCP
7
-
8
-
10
-
ns
RAS Pulse Width(Fast Page mode)
tRASP
40
125000
50
125000
60
125000
ns
RAS Hold Time from CAS Precharge
tRHCP
25
-
30
-
35
-
ns
Access Time from OE
tOEA
-
10
-
13
-
15
ns
OE to Delay Time
tOED
8
-
10
-
13
-
ns
Output Buffer Turn-off Delay Time from
OE
tOEZ
0
8
0
10
0
13
ns
7
OE Hold Time
tOEH
0
-
0
-
0
-
ns
WE Hold Time(Hidden Refresh Cycle)
tWHR
15
-
15
-
15
-
ns