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PMEG3005EH Datasheet(PDF) 4 Page - NXP Semiconductors |
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PMEG3005EH Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 13 page 9397 750 14515 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 12 April 2005 4 of 13 Philips Semiconductors PMEGxx05EH/EJ series 0.5 A very low VF MEGA Schottky barrier rectifiers 6. Thermal characteristics [1] Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] [2] SOD123F - - 330 K/W SOD323F - - 350 K/W [1] [3] - - 150 K/W Rth(j-sp) thermal resistance from junction to solder point SOD123F - - 60 K/W SOD323F - - 55 K/W |
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