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MMBT5550 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. MMBT5550
Description  NPN General Purpose Amplifier
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MMBT5550 Rev. A
August 2005
MMBT5550
NPN General Purpose Amplifier
• This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.
Absolute Maximum Ratings * T
a = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
a = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
140
V
VCBO
Collector-Base Voltage
160
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector current
- Continuous
600
mA
TJ, Tstg
Junction and Storage Temperature
-55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
IC = 1.0mA, IB = 0
140
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100µA, IE = 0
160
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10mA, IC = 0
6.0
V
ICBO
Collector Cutoff Current
VCB = 100V, IE = 0
VCB = 100V, IE = 0, Ta = 100°C
100
100
nA
µA
IEBO
Emitter Cutoff Current
VEB = 4.0V, IC = 0
50
nA
On Characteristics
hFE
DC Current Gain
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
60
60
20
250
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.15
0.25
V
V
VBE(sat)
Base-Emitter On Voltage
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
1.0
1.2
V
V
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Marking: 1F




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