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RN2508 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # RN2508
Description  Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN2508 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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RN2507~RN2509
2001-06-05
2
Electrical Characteristics (Ta = 25
°°°°C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = −50V, IE = 0
−100
nA
Collector cut-off
current
RN2507~RN2509
ICEO
VCE = −50V, IB = 0
−500
nA
RN2507
VEB = −6V, IC = 0
−0.081
−0.15
RN2508
VEB = −7V, IC = 0
−0.078
−0.145
Emitter cut-off
current
RN2509
IEBO
VEB = −15V, IC = 0
−0.167
−0.311
mA
RN2507
80
RN2508
80
DC current gain
RN2509
hFE
VCE = −5V, IC = −10mA
70
Collector-emitter
saturation voltage
RN2507~RN2509 VCE (sat)
IC = −5mA, IB = −0.25mA
−0.1
−0.3
V
RN2507
−0.7
−1.8
RN2508
−1.0
−2.6
Input voltage (ON)
RN2509
VI (ON)
VCE = −0.2V, IC = −5mA
−2.2
−5.8
V
RN2507
−0.5
−1.0
RN2508
−0.6
−1.16
Input voltage (OFF)
RN2509
VI (OFF)
VCE = −5V, IC = −0.1mA
−1.5
−2.6
V
Translation
frequency
RN2507~RN2509
fT
VCE = −10V, IC = −5mA
200
MHz
Collector output
capacitance
RN2507~RN2509
Cob
VCB = −10V, IE = 0
f = 1MHz
3
6
pF
RN2507
7
10
13
RN2508
15.4
22
28.6
Input resistor
RN2509
R1
32.9
47
61.1
kΩ
RN2507
0.191
0.213
0.232
RN2508
0.421
0.468
0.515
Resistor ratio
RN2509
R1/R2
1.92
2.14
2.35


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