3

Absolute Maximum Ratings

Thermal Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V

Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.3V to VCC+0.3V

Typical Derating Factor . . . . . . . . . . . 5mA/MHz Increase in ICCOP

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

Operating Conditions

Operating Voltage Range

. . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Operating Temperature Range . . . . . . . . . . . . . . . .-55°C to +125°C

Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.8V

Input High Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 2.4 to VCC+0.3V

Thermal Resistance (Typical)

SBDIP Package . . . . . . . . . . . . . . . . . .

52

14

Slim SBDIP . . . . . . . . . . . . . . . . . . . . .

70

19

CLCC Package . . . . . . . . . . . . . . . . . .

58

14

Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C

Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +175°C

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300°C

Die Characteristics

Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1680 Gates

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

TABLE 1. HM-6642/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS

Device Guaranteed and 100% Tested

PARAMETER

SYMBOL

(NOTES 1, 4)

CONDITIONS

GROUP A

SUBGROUPS

TEMPERATURE

(°C)

MIN

MAX

UNITS

High Level Output Voltage

VOH

VCC = 4.5V, IO = -1.0mA

1, 2, 3

-55

2.4

-

V

Low Level Output Voltage

VOL

VCC = 4.5V, IO = +3.2mA

1, 2, 3

-55

-

0.4

V

High Impedance Output

Leakage Current

IIOZ

VCC = 5.5V, G = 5.5V,

VI/O = GND or VCC

1, 2, 3

-55

-1.0

1.0

µA

Input Leakage Current

II

VCC = 5.5V, VI = GND or VCC,

P Not Tested

1, 2, 3

-55

-1.0

1.0

µA

Standby Supply Current

ICCSB

VI = VCC or GND, VCC = 5.5V,

IO = 0mA

1, 2, 3

-55

-

100

µA

Operating Supply Current

ICCOP

VCC = 5.5V, G = GND,

G = VCC, (Note 3), f = 1MHz,

IO = 0mA, VI = VCC or GND

1, 2, 3

-55

-

20

mA

Functional Test

FT

VCC = 4.5V (Note 5)

7, 8A, 8B

-55

-

-

-

TABLE 2. HM-6642/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS

Device Guaranteed and 100% Tested

PARAMETER

SYMBOL

(NOTES 1, 2, 4)

CONDITIONS

GROUP A

SUB-

GROUPS

TEMPERATURE

(°C)

HM-6642B/883

HM-6642/883

UNITS

MIN

MAX

MIN

MAX

Address Access Time

TAVQV

VCC = 4.5V and 5.5V

9, 10, 11

-55

-

140

-

220

ns

Output Enable Access Time

TGVQV

VCC = 4.5V and 5.5V

9, 10, 11

-55

-

50

-

150

ns

Chip Enable Access Time

TELQV

VCC = 4.5V and 5.5V

9, 10, 11

-55

-

120

-

200

ns

Address Setup Time

TAVEL

VCC = 4.5V and 5.5V

9, 10, 11

-55

20

-

20

-

ns

Address Hold Time

TELAX

VCC = 4.5V and 5.5V

9, 10, 11

-55

25

-

60

-

ns

Chip Enable Low Width

TELEH

VCC = 4.5V and 5.5V

9, 10, 11

-55

120

-

200

-

ns

Chip Enable High Width

TEHEL

VCC = 4.5V and 5.5V

9, 10, 11

-55

40

-

150

-

ns

Read Cycle Time

TELEL

VCC = 4.5V and 5.5V

9, 10, 11

-55

160

-

350

-

ns

NOTES:

1. All voltages referenced to VSS.

2. A.C. measurements assume transition time < 5ns; input levels = 0.0V to 3.0V; timing reference levels = 1.5V; output load = 1TTL equivalent load

and CL

≅ 50pF.

3. Typical derating = 5mA/MHz increase in ICCOP.

4. All tests performed with P hardwired to GND.

5. Tested as follows: f = 1MHz, VIH = 2.4V, VIL = 0.8V, IOH = -1mA, IOL = +1mA, VOH

≥ 1.5V, VOL ≤ 1.5V.

HM-6642/883