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HA-5134/883

Die Characteristics

DIE DIMENSIONS:

91 x 114 x 19 mils

± 1mils

2300 x 2900 x 483

µm ± 25.4µm

METALLIZATION:

Type: Al, 1% Cu

Thickness: 16k

Å

GLASSIVATION:

Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)

Silox Thickness: 12k

Å

Nitride Thickness: 3.5k

Å

WORST CASE CURRENT DENSITY:

This device meets Glassivation Integrity Test Requirement

per MIL-STD-883 Method 2021 and MIL-I-38535 Paragraph 30.5.5.4.

SUBSTRATE POTENTIAL (Powered Up):

Unbiased

TRANSISTOR COUNT: 160

PROCESS: Bipolar Dielectric Isolation

Metallization Mask Layout

HA-5134/883

-IN1

OUT1

OUT4

-IN4

+IN4

V-

+IN3

-IN3

OUT3

OUT2

-IN2

+IN2

V+

+IN1

Spec Number

511033-883