GM71C4400CL-80 datasheet(7/9 Pages) LG

Part #	GM71C4400CL-80

Description	1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM

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Manufacturer	LG [LG Semicon Co.,Ltd.]

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LG Semicon

GM71C(S)4400C/CL

7

Test Mode Cycle

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

Max

Min

tWS

Test Mode WE Setup Time

0

-

0

-

0

-

ns

tWH

Test Mode WE Hold Time

10

-

10

-

10

-

ns

Counter Test Cycle

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

Max

Min

tCPT

CAS Precharge Time in Counter Test

Cycle

40

-

40

-

40

-

ns

AC Measurements assume tT = 5ns.

Assumes that tRCD<=tRCD(max) and tRAD<=tRAD(max). If tRCD or tRAD is greater than the maximum

recommended value shown in this table, tRAC exceeds the value shown.

Measured with a load circuit equivalent to 2TTL loads and 100§Ü.

Assumes that tRCD>=tRCD(max) and tRAD<=tRAD(max).

Assumes that tRCD<=tRCD(max) and tRAD>=tRAD(max).

tOFF(max) defines the time at which the output achieves the open circuit condition and is not

referenced to output voltage levels.

VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Also,

transition times are measured between VIH and VIL.

Operation with the tRCD(max) limit insures that tRAC(max) can be met, tRCD(max) is specified as a

reference point only; if tRCD is greater than the specified tRCD(max) limit, then access time is

controlled exclusively by tCAC.

Operation with the tRAD(max) limit insures that tRAC(max) can be met, tRAD(max) is specified as a

reference point only; if tRAD is greater than the specified tRAD(max) limit, then access time is

controlled exclusively by tAA.

Notes:

1.

2.

3.

4.

5.

6.

7.

8.

9.

GM71C(S)4400

C/CL-60

GM71C(S)4400

C/CL-70

GM71C(S)4400

C/CL-80

GM71C(S)4400

C/CL-60

GM71C(S)4400

C/CL-70

GM71C(S)4400

C/CL-80

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GM71C4400CL-80 Datasheet(PDF) 7 Page - LG Semicon Co.,Ltd.

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