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GM71C4403CR-70 Datasheet(PDF) 5 Page - LG Semicon Co.,Ltd.

Part # GM71C4403CR-70
Description  1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
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Manufacturer  LG [LG Semicon Co.,Ltd.]
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Logo LG - LG Semicon Co.,Ltd.

GM71C4403CR-70 Datasheet(HTML) 5 Page - LG Semicon Co.,Ltd.

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LG Semicon
GM71C4403C
5
Read Cycle
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
tRAC
Access Time from RAS
-
60
-
70
-
80
ns
tCAC
Access Time from CAS
-
15
-
18
-
20
ns
tAA
Access Time from Address
-
30
-
35
-
40
ns
tRCS
Read Command Setup Time
0
-
0
-
0
-
ns
tRCH
Read Command Hold Time to CAS
0
-
-
-
ns
0
0
tRRH
Read Command Hold Time to RAS
0
-
-
-
ns
0
0
tRAL
Column Address to RAS Lead Time
30
-
-
-
ns
35
40
2,3,17
3, 4, 13,
17
tOFF
Output Buffer Turn-off Time
15
15
15
ns
6,21
tOAC
Access Time from OE
-
15
-
18
-
20
ns
3,17
tOEZ
Output Buffer Turn-off Time to OE
15
15
15
ns
6
tCDD
CAS to DIN Delay Time
-
-
-
ns
15
18
20
GM71C4403
C-60
GM71C4403
C-70
GM71C4403
C-80
tOEP
OE Pulse width
-
-
-
ns
15
18
20
tCAL
Column Address to CAS Lead Time
18
-
-
-
ns
23
28
tRDD
RAS to DIN Delay Time
-
-
-
ns
15
18
20
tWDD
WE to DIN Delay Time
-
-
-
ns
15
18
20
tOFR
Output Buffer Turn-off Time to RAS
15
15
-
ns
6,21
tWEZ
Output Buffer Turn-off Time to WE
15
15
-
15
15
ns
6
tOH
Output Data Hold Time
5
-
5
-
5
-
ns
tOHR
Output Data Hold Time form RAS
5
-
5
-
5
-
ns
tRCHR
Read Command Hold Time from
RAS
60
-
70
-
80
-
ns
3, 5, 13,
17
18
18
-
-
-
-
-
-
-
-
-
-


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