GM71C4403CJ-80 datasheet(6/10 Pages) LG

Part #	GM71C4403CJ-80

Description	1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM

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Manufacturer	LG [LG Semicon Co.,Ltd.]

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LG Semicon

GM71C4403C

6

Read- Modify-Write Cycle

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

Max

Min

tRWC

Read-Modify-Write Cycle Time

-

159

-

183

-

ns

tRWD

RAS to WE Delay Time

-

90

-

102

-

ns

tCWD

CAS to WE Delay Time

-

38

-

42

-

ns

tAWD

Column Address to WE Delay Time

-

55

-

62

-

ns

10

tOEH

OE Hold Time from WE

-

18

-

20

-

ns

Refresh Cycle

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

Max

Min

tCSR

CAS Set-up Time

(CAS-before-RAS Refresh Cycle)

10

-

10

-

10

-

ns

tCHR

CAS Hold Time

(CAS-before-RAS Refresh Cycle)

10

-

10

-

10

-

ns

tRPC

RAS Precharge to CAS Hold Time

10

-

10

-

10

-

ns

tCPN

CAS Precharge Time in Normal Mode

10

-

13

-

15

-

ns

GM71C4403

C-60

GM71C4403

C-70

GM71C4403

C-80

GM71C4403

C-60

GM71C4403

C-70

GM71C4403

C-80

133

77

32

47

15

Write Cycle

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

Max

Min

tWCS

Write Command Setup Time

0

-

0

-

0

-

ns

tWCH

Write Command Hold Time

10

-

13

-

15

-

ns

tWP

Write Command Pulse Width

10

-

10

-

10

-

ns

tRWL

Write Command to RAS Lead Time

10

-

13

-

15

-

ns

tCWL

Write Command to CAS Lead Time

10

-

ns

13

15

tDS

Data-in Setup Time

0

-

ns

0

tDH

Data-in Hold Time

10

-

ns

13

15

11

10

GM71C4403

C-60

GM71C4403

C-70

GM71C4403

C-80

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GM71C4403CJ-80 Datasheet(PDF) 6 Page - LG Semicon Co.,Ltd.

GM71C4403CJ-80 Datasheet(HTML) 6 Page - LG Semicon Co.,Ltd.

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