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5082-3077 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard) |
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5082-3077 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard) |
2 / 4 page 2 Mechanical Specifications The Agilent Outline 15 package has a glass hermetic seal with dumet leads. The lead finish is 95- 5 tin-lead (SnPb) for all PIN diodes. The leads on the Outline 15 package should be restricted so that the bend starts at least 1/ 16 inch (1.6 mm) from the glass body. Typical package inductance and capacitance are 2.5 nH and 0.13 pF, respectively. Marking is by digital coding with a cathode band. General Purpose Diodes Electrical Specifications at TA = 25°C Maximum Minimum Maximum Part Total Breakdown Residual Series Effective Carrier Reverse Recovery Number Capacitance Voltage Resistance Lifetime Time 5082- C T (pF) V BR (V) R S (Ω) τ (ns) t rr (ns) General Purpose Switching and Attenuating 3001 0.25 200 1.0 100 (min.) 100 (typ.) 3039 0.25 150 1.25 100 (min.) 100 (typ.) 1N5719 0.3** 150 1.25 100 (min.) 100 (typ.) 3077 0.3 200 1.5 100 (min.) 100 (typ) Band Switching 3188 1.0* 35 0.6** 70 (typ.)* 12 (typ.) Test V R = 50 V V R = VBR I F =100 mA I F = 50 mA I F = 20 mA Conditions *V R = 20 V Measure *I F = 20 mA I R = 250 mA V R = 10 V **V R = 100 V I R ≤ 10 µA **I F = 10 mA *I F = 10 mA 90% Recovery f = 1 MHz f = 100 MHz *I R = 6 mA Notes: Typical CW power switching capability for a shunt switch in a 50 Ω system is 2.5 W. RF Current Controlled Resistor Diodes Electrical Specifications at TA = 25°C Max. Max. High Low Difference Effective Min. Residual Max. Resistance Resistance in Carrier Breakdown Series Total Limit, R H (W) Limit, R L (W) Resistance Part Lifetime Voltage Resistance Capacitance vs. Bias Number t (ns) V BR (V) R S (Ω)CT (pF) Min. Max. Min. Max. Slope, Dc 5082-3080 1300 (typ.) 100 2.5 0.4 1000 8** 1N5767* 1300 (typ.) 100 2.5 0.4 1000 8** 5082-3379 1300 (typ.) 50 0.4 8** 5082-3081 2500 (typ.) 100 3.5 0.4 1500 8** Test I F = 50 mA V R = VBR,IF = 100 mA V R = 50 V I F = 0.01 mA I F = 1.0 mA Batch Conditions I R = 250 mA Measure f = 100 MHz f = 1 MHz f = 100 MHz I F = 20 mA** Matched at I R ≤ 10 µA f = 100 MHz I F = 0.01 mA and 1.0 mA f = 100 MHz *The 1N5767 has the additional specifications: τ = 1.0 msec minimum IR = 1 µA maximum at VR = 50 V VF = 1 V maximum at IF = 100 mA. |
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