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H11AA2-MV Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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H11AA2-MV Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 9 page  1/9/04 Page 2 of 9 © 2004 Fairchild Semiconductor Corporation AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS H11AA1-M H11AA2-M H11AA3-M H11AA4-M *Typical values at TA = 25°C ABSOLUTE MAXIMUM RATINGS (TA =25°C Unless otherwise specified) Parameter Symbol Device Value Units TOTAL DEVICE Storage Temperature TSTG All -40 to +150 °C Operating Temperature TOPR All -40 to +100 °C Lead Solder Temperature TSOL All 260 for 10 sec °C Total Device Power Dissipation Derate Linearly From 25°C PD All 250 mW 2.94 mW/°C EMITTER Continuous Forward Current IF All 60 mA Forward Current – Peak (1 µs pulse, 300 pps) IF(pk) All ±1.0 A LED Power Dissipation Derate Linearly From 25°C PD All 120 mW 1.41 mW/°C DETECTOR Continuous Collector Current IC All 50 mA Detector Power Dissipation Derate linearity from 25°C PD All 150 mW 1.76 mW/°C ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Device Min Typ* Max Unit EMITTER Input Forward Voltage IF = ±10 mA VF All 1.17 1.5 V Capacitance VF = 0 V, f = 1.0 MHz CJ All 80 pF DETECTOR Breakdown Voltage Collector to Emitter IC = 1.0 mA, IF = 0 BVCEO All 30 100 V Collector to Base IC = 100 µA, IF = 0 BVCBO All 70 120 V Emitter to Base IE = 100 µA, IF = 0 BVEBO All 5 10 V Emitter to Collector IE = 100 µA, IF = 0 BVECO All 7 10 V Leakage Current Collector to Emitter VCE = 10 V, IF = 0 ICEO H11AA1,3,4(-M) 1 50 nA H11AA2-M 1 200 Capacitance Collector to Emitter VCE = 0, f = 1 MHz CCE All 10 pF Collector to Base VCB = 0, f = 1 MHz CCB All 80 pF Emitter to Base VEB = 0, f = 1 MHz CEB All 15 pF |
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